High temperature & high pressure equipment


Vacuum heat treatment equipment 


| ALD: Atomic Layer Deposition system

 DESCRIPTION

  • A method for depositing thin films at the atomic level based on self-limiting surface reactions of molecules
  • A very thin atomic-level thickness layer can be uniformly deposited on flat materials such as silicon wafers without damaging the device.

 FEATURES

  • 100% surface response compared to CVD
  • Excellent film thickness control
  • Excellent film quality compared to CVD

 APPLICATIONS

  • Passivation layers for electronic components
  • Diffusion barriers for organic materials
  • Passivation for solar cells
  • Adhesion layers
  • Excellent conformal coatings for 3D structures
  • High k materials
  • Optical coatings
  • Diffusion layers
  • Anti-corrosion layers
  • Functional layers for nanotechnology

 SPECIFICATIONS

Model No.
ALD-200
ALD-500
Description
Wafer sizexQ’ty : 4 inchx10Sht.
Wafer sizexQ’ty : 4 inchx15Sht.
Plasma Source.

RF = 1,000 W : 1 ea

RF frequency : 13.56 MHz

* Option Item

RF = 1,500 W : 1 ea

RF frequency : 13.56 MHz

* Option Item

Source Diameter
Φ 150 mm, Multi Stage
200 mm, Multi Stage
Source hight
122.0 mm
122.0 mm
Degree of Angle
O Degree, Planar type
Degree, Planar type
Type

Vertical & Upper Door open /

close by pneumatic cylinder

Vertical & Upper Door open /

close by pneumatic cylinder

Chamber size
Φ 200 x 95H in mm.
Φ 200 x 170H in mm.
Outer Case size
1325L x 600W x 1298H
1800L x 900W x 2033H
Construction Materials
SUS 304
SUS 304
Vacuum rate
5 x 10E6 Torr.
5 x 10E6 Torr.
Substrate Temp.
300 ~ 5000℃
300 ~ 500℃
Substrate Rotation
N / A(Not Applicable)
N / A(Not Applicable)
Z axis Adjust
N / A(Not Applicable)
N / A(Not Applicable)
Argon gas feed
200 SCCM
300 SCCM
Precursor Quantity
4 ea with Heating Mantle
4 ea with Heating Mantle
Carrier
Nitrogen, Oxygen, Hydrogen
Nitrogen, Oxygen, Hydrogen
Power Rating

220 / 380 VAC, 3 Phase,

60 Hz, 45 kW

220 / 380 VAC, 3 Phase,

60 Hz, 55 kW


| PECVD : Plasma Enhanced Chemical Vapour Deposition System

 DESCRIPTION

  • A type of chemical vapor deposition technology that uses plasma to deposit gaseous substances on the surface of a substrate
  • Plasma has high energy, so gas molecules are broken down and quickly deposited on the surface of a substrate.

 FEATURES

  • Provides fast deposition rates to improve production efficiency
  • High-quality deposition even at low temperatures using plasma
  • Uniform thickness and consistent quality formation across the substrate
  • Capable of deposition of various materials including metal oxides

 APPLICATIONS

  • Display process: Formation of insulating layer and protective film during panel manufacturing
  • Semiconductor process: Deposition of various films such as insulating film and passivation layer at low temperature

 SPECIFICATIONS

Model No.
PECVD-014-8
PECVD-018-10
Description
Substrate size : 8 inch
Target size : 10 inch
Sputter Source.

RF = 1,000 W : 1 ea

RF frequency : 13.56 MHz

RF = 1,500 W : 1 ea

RF frequency : 13.56 MHz

Source Diameter
Φ 250 mm, Multi Stage
Φ 300 mm, Multi Stage
Source hight
122.0 mm
122.0 mm
Degree of Angle
O Degree, Planar type
0 Degree, Planar type
Type

Vertical & Upper Door open /

close by pneumatic cylinder

Vertical & Upper Door open /

close by pneumatic cylinder

Chamber size
Φ 14 inch
Φ 18 inch
Construction Materials
SUS 304
SUS 304
Vacuum rate
5 x 10E6 Torr.
5 x 10E6 Torr.
Substrate Temp.
300 ~ 8000℃
300 ~ 800℃
Substrate Rotation
10 ~ 40 mm
0 ~ 20 rpm
Z axis Adjust
200 SCCM
10 ~ 50 mm
Argon gas feed
200 SCCM
300 SCCM
Power Rating

220/380 VAC, 3 Phase,

60 Hz, 45 kW

220/380 VAC, 3 Phase,

60 Hz, 55 kW


| RF/DC Magnetron Sputtering System

 DESCRIPTION

  • High energy particles bombard a solid surface, transferring momentum to eject and deposit target atoms from the solid surface.
  • DC is for conductive targets such as metals and alloys, while RF is for insulator deposition.
  • RF can generate heat in the substrate by using higher voltages than DC. Also, the deposition rate is slower than DC.
  • Magnetron sputtering is a method to increase the deposition rate by allowing additional electron movement.

 FEATURES

  • Provides fast deposition rates to improve production efficiency
  • Forms uniform thickness and consistent quality across the entire substrate

 APPLICATIONS

  • Film Deposition
  • Semiconductor Etching

 SPECIFICATIONS

· Common Type

Model No.
RF/DC – C – 018 - 2
RF/DC – C – 020 - 4
Description
Target size : 2 inch
Target size : 4 inch
Sputter Source.

DC = 1,200 W : 1 ea

RF = 800 W : 2 ea

RF frequency : 13.56 MHz

DC = 1,500 W : 1 ea

RF = 1,000 W : 2 ea

RF frequency : 13.56 MHz

Source Diameter
Φ 88.9 mm
Φ 140.3 mm
Source hight
122.0 mm
122.0 mm
Degree of Angle
120 Degree Dividing
120 Degree Dividing
Magnet

Nd-Fe

Nd-Fe

Type

Vertical & Upper Door open /

close by pneumatic cylinder

Vertical & Upper Door open /

close by pneumatic cylinder

Chamber size
Φ 18 inch
Φ 20 inch
Construction Materials
SUS 304
SUS 304
Vacuum rate
5 x 10E6 Torr.
5 x 10E6 Torr.
Substrate Temp.
300 ~ 1,000℃
300 ~ 1,000℃
Substrate Rotation
0 ~ 20 rpm
0 ~ 20 rpm
Z axis Adjust
10 ~ 40 mm
10 ~ 50 mm
Argon gas feed
100 SCCM
150 SCCM
Power Rating

220 / 380 VAC, 3 Phase,

60 Hz, 45 kW

220 / 380 VAC, 3 Phase,

60 Hz, 55 kW

· Planar Type

Model No.
RF / DC-P-012RF / DC-P-014RF / DC-P-016RF / DC-P-016
Description
Target Dia. 1“Target Dia. 2“Target Dia. 3“Target Dia. 4“
Max. Thick.

3.2 mm

6.3 mm

9.5 mm9.5 mm
Max. power

DC = 150 W

RF = 150 W

DC = 700 W

RF = 500 W

DC = 1,200 W

RF = 800 W

DC = 1,500 W

RF = 1,000 W

Argon gas Supply
50 SCCM
75 SCCM
100 SCCM
150 SCCM
Cooling W’tr
O.5 L/m
1.7 L/m
2.3 L/m
3 L/m
Surce Dia.

45.7 mm

88.9 mm

117.6 mm
143.0 mm
Source Hight

38.1 mm

122.0 mm

122.0 mm
122.0 mm
Chamber size
Φ12 inch
Φ14 inch
Φ16 inch
Φ16 inch
Construction Materials
SUS 304
SUS 304
SUS 304
SUS 304
Type

Vertical,

Upper door

Pneumatic Cylinder

ope / close

Vertical,

Upper door

Pneumatic Cylinder

ope / close

Vertical,

Upper door

Pneumatic Cylinder

ope / close

Vertical,

Upper door

Pneumatic Cylinder

ope / close

Vacuum rate
5 x 10E6 Torr.
5 x 10E6 Torr.
5 x 10E6 Torr.
5 x 10E6 Torr.
Substrate Temperature

200 ~ 1,000 ℃

200 ~ 1,000 ℃

200 ~ 1,000℃

200 ~ 1,000℃

Substrate Rotation
0 ~ 20 rpm
0 ~ 20 rpm
0 ~ 20 rpm

0 ~ 20 rpm
Z axis adjust
10 ~ 30 mm
10 ~ 40 mm
10 ~ 50 mm
10 ~ 50 mm
Power rating

220 / 380 VAC,

3 P, 60 Hz,

25 kW

220 / 380 VAC,

3 P, 60 Hz,

30 kW 

220 / 380 VAC,

3 P, 60 Hz,

35 kW

220 / 380 VAC,

3 P, 60 Hz,

40 kW


| Electron-beam Evaporation System

 DESCRIPTION

  • E-beam Evaporation is a type of physical vapor deposition technology.
  • A technique used to deposit materials with very high vaporization temperatures, including refractory metals and metal oxides, by colliding with a high-energy electron stream to heat the evaporation material to a high temperature.
  • Metal materials with high melting temperatures, such as tungsten, can be deposited.

 FEATURES

  • Precise control of deposition rate and film thickness
  • Useful for various metal materials and high melting point materials
  • Maintain high purity and high quality
  • Minimize substrate damage compared to sputtering methods

 APPLICATIONS

  • Semiconductor / Display Industry
  • Optics
  • Electronics
  • Consumer packaging
  • Jewellery and accessories

 SPECIFICATIONS

Model No.
EBE-016-211
EBE-016-224
EBE-016-264
EBE-016-274
Description
Single Pocket
4cc x 4 Pocket
7cc x 4 Pocket
15cc x 4 Pocket
Chamber size
16 inch
16 inch
16 inch
16 inch
Construction Materials
SUS304
SUS304
SUS304
SUS304
Type

Vertical & Front Door

Vertical & Front Door

Vertical & Front Door

Vertical & Front Door

Vacuum rate
5x10E6 Torr.
5x10E6 Torr.
5x10E6 Torr.
5x10E6 Torr.
Substrate Temperature

300~1000℃

300~1000℃

300~1000℃

300~1000℃

Crucible Size
15CC
4CC
4CC
4CC
Substrate Rotation
0~20rpm
0~20rpm
0~20rpm
0~20rpm
E-beam Power
6kW @ -6 ~ 10kV
4kW @ -5 ~ -7kV
10kW @ -6 ~ -10kV
10kW @ -6 ~ -10kV
Power Ration

220 / 380V AC, 3Phase, 60Hz 30kW

220 / 380V AC, 3Phase, 60Hz 30kW

220 / 380V AC, 3Phase, 60Hz 40kW

220 / 380V AC, 3Phase, 60Hz 40kW

NATM Co., Ltd  Tel. 041.415.0402  Mail. ihkim@ntatm.com  Fax. 0505-300-3853


Head Office  172-24, Yeongok-gil, Ipjang-myeon, Seobuk-gu, Cheonan-si, Chungcheongnam-do, South Korea  Tel : 041-415-0402

Research Institute  Korea Rare Metals Industry Technology Center, 12 Gaetbeol-ro, Songdo-dong, Yeonsu-gu, Incheon, South Korea  Tel : 070-4349-3853


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